Philips bf1105 r wr free download

File name bf1105_r_wr.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification 1997 Dec 02 Supersedes data of 1997 Dec 01 NXP Semiconductors Product specification BF1105; BF1105R; N-channel dual-gate MOS-FETs BF1105WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION 3 handbook, 2 columns 4 forward transfer admittance to input 1 source capacitance ratio 2 drain Low noise gain controlled amplifier up to 1 GHz. 3 gate 2 2 1 Internal self-biasing circuit to 4 gate 1 ensure good cross-modulation Top view MSB035 performance during AGC and good DC stabilization. BF1105R marking code: NAp. APPLICATIONS Fig.2 Simplified outline (SOT143R). VHF and UHF applications with 5 V supply voltage, such as television tuners and professional communications equipment. 4 handbook, 2 columns 3 alfpage 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and 1 2 2 1 substrate interconnected. Integrated diodes between gates and source Top view MSB014 Top view MSB842 protect against excessive input voltage surges. The BF1105, BF1105 marking code: NEp. BF1105WR marking code: NA. BF1105R and BF1105WR are encapsulated in the SOT143B, Fig.1 Simplified outline Fig.3 Simplified outline SOT143R and SOT343R plastic (SOT143B). (SOT343R). pac